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ISO-9001 CERTIFIED BY DSCC
M.S.KENNEDY CORP.
QUAD N-CHANNEL MOSFET POWER MODULE
3013
(315) 701-6751
4707 Dey Road Liverpool, N.Y. 13088
FEATURES: * Pin Compatible with MPM3013 * QUAD Independent N - Channel MOSFETS * Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity * Avalanche Rated Devices * 55 Volt, 25 Amp Rated * Low RDS (ON) - 0.022 For Each Die DESCRIPTION:
The MSK 3013 is a QUAD N-Channel power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3013 consists of four totally isolated N-Channel MOSFETs. The MSK 3013 uses M.S.Kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3013 is a replacement for the MPM3013 with only minor differences in specifications.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS * * * * *
Stepper Motor Servo Control Disk Drive Head Control X-Y Table Control Az-El Antenna Control Various Switching Applications
1
PIN-OUT INFORMATION
1 2 3 4 5 6 Q1 Q1 Q1 Q2 Q2 Q2 Gate Source Drain Gate Source Drain 7 8 9 10 11 12 Q3 Q3 Q3 Q4 Q4 Q4 Gate Source Drain Gate Drain Source
Rev. B 7/00
ABSOLUTE MAXIMUM RATINGS
VDSS VDGDR VGS ID IDM RTH-JC Drain to Source Voltage Drain to Gate Voltage (RGS=1M). . . . . . . Gate to Source Voltage (Continuous).. . . . . . Continuous Current . . Pulsed Current . . . . . Thermal Resistance (Junction to Case).. . . . . .55V MAX . . 55V MAX . 20V MAX . . . 25A MAX . . 49A MAX . . 0.3C/W TJ TST TC TLD Junction Temperature. . . . . . . . Storage Temperature. . . . . . . . Case Operating Temperature Range Lead Temperature Range (10 Seconds) . . . . . . . . . . . . . . +175C MAX .-55C TO +150C . .-55C TO 125C . . . . .300C MAX
ELECTRICAL SPECIFICATIONS
Parameter
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Threshold Voltage Drain-Source on Resistance Drain-Source on Resistance Forward Transconductance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time 1 1 1 1 1 1 2 3 1
Test Conditions 4
VGS = 0 VDS = 55V VGS = 20V VDS = VGS VGS = 10V VGS = 10V VDS = 25V ID = 0.25 mA VGS = 0V VDS = 0 ID = 250 A ID = 25A ID = 25A ID = 25A
Min.
55 2 17 -
MSK 3013 Typ.
0.033 7.3 69 47 60 1300 410 150
Max.
25 100 4 0.040 0.022 65 12 27 -
Units
V A nA V

S nC nC nC nS nS nS nS pF pF pF
ID = 25A VDS = 28V VGS = 10V VDD = 28V ID = 25A RG = 12
Turn-Off Delay Time Fall Time 1 1
RD = 1.1 VGS = 0V 1 1 VDS = 25V f = 1 MHz
Input Capacitance Output Capacitance
Reverse Transfer Capacitance BODY DIODE Forward on Voltage 1 1 1
IS = 25A IS = 25A IS = 25A
VGS = 0V di/dt = 100A/S di/dt = 100A/S
-
1.3 65 160
1.75 98 240
V nS C
Reverse Recovery Time Reverse Recovery Charge
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. 2 Resistance as seen at package pins. 3 Resistance for die only; use for thermal calculations. 4 TA=25C unless otherwise specified. Parameters apply to each transistor in the module.
2 Rev. B 7/00
APPLICATION NOTES N-CHANNEL GATES
For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors are on. This will keep the dissipation down to a minimum level [RDS(ON) specified in the data sheet]. How quickly the gate gets turned ON and OFF will determine the dissipation of the transistor while it is transitioning from OFF to ON, and vice-versa. Turning the gate ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching noise in the system. It is important to have as low a driving impedance as practical for the size of the transistor. Many motor drive IC's have sufficient gate drive capability for the MSK 3013. If not, paralleled CMOS standard gates will usually be sufficient. A series resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray inductances in the MOSFET circuit. The selection of the resistor is determined by how fast the MOSFET wants to be switched. See Figure 1 for circuit details.
Figure 1
BRIDGE DRIVE CONSIDERATIONS
It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high side transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called "shoot-through", and it places a momentary short across the power supply. This overly stresses the transistors and causes excessive noise as well. See Figure 3.
Figure 2
This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are used for servo systems such as locked antiphase PWM'ing for high bandwidth operation. 3 Rev. B 7/00
TYPICAL PERFORMANCE CURVES
4
Rev. B 7/00
MECHANICAL SPECIFICATIONS
TORQUE SPECIFICATION 3 TO 5 IN/LBS. TEFLON SCREWS OR WASHERS ARE RECOMMENDED. ALL DIMENSIONS ARE 0.010 INCHES UNLESS OTHERWISE LABELED.
ORDERING INFORMATION
PART NUMBER SCREENING LEVEL
MSK 3013
Industrial
4707 Dey Road, Liverpool, New York 13088 Phone (315) 701-6751 FAX (315) 701-6752 www.mskenndy.com
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
M.S. Kennedy Corp.
5
Rev. B 7/00

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